ELECTRICAL PROPERTIES OF LIGHT EMITTING HETEROSTRUCTURES n-TiN/n-GaP

Authors

  • М. М. Солован
  • П. Д. Мар'янчук
  • Е. В. Майструк
  • І. Г. Орлецький

Abstract

     Light emitting heterojunction n-TiN/n-GaP were fabricated by the deposition of the TiN thin film onto the GaP single crystal substrate by means of the reactive magnetron spattering.

     The temperature dependences of the height of the potential barrier and series resistance as well as the capacitance-voltage characteristics at different frequencies of the ac signal were investigated.

     We have established that the dominating current transport mechanisms through the heterojunctions under investigated are well described in the scope of the tunnel-recombination and generation-recombination models.

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Published

2016-01-13

How to Cite

Солован, М. М., Мар’янчук, П. Д., Майструк, Е. В., & Орлецький, І. Г. (2016). ELECTRICAL PROPERTIES OF LIGHT EMITTING HETEROSTRUCTURES n-TiN/n-GaP. Lighting Engineering & Power Engineering, (1), 4–10. Retrieved from https://lepe.kname.edu.ua/index.php/lepe/article/view/306

Issue

No. 1 (2014): №37

Section

Articles

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